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| Advanced Product Information 1.1 FMS2020 GaAs Multi-Purpose Wide Band SPDT Switch Features: Available in die form Suitable for L and S-band digital cellular, cordless telephony and WLAN applications High isolation, 30dB typ at 2.5GHz Low insertion loss, 0.4dB typ at 2.5GHz P0.1dB > 35dBm Functional Schematic ANT V1 V2 RF1 RF2 Description and Applications: The FMS2020 is a low loss, high power and linear single pole dual throw Gallium Arsenide antenna switch. The die is fabricated using the Filtronic FL05 0.5m switch process technology which offers leading edge performance optimised for switch applications. The FMS2020 is designed for use in L and S band wireless applications. Electrical Specifications: Parameter Insertion Loss (TAMBIENT = 25C,Vcontrol = 0V/2.5V, ZIN = ZOUT = 50) Test Conditions 0.5 - 1.0 GHz 1.0 - 2.5 GHz Min Typ 0.4 0.4 25 33 30 36 -75 -75 <0.3 <1.0 Max Units dB dB dB dB dB Return Loss Isolation 0.5 - 2.5 GHz 0.5 - 1.0 GHz 1.0 - 2.5 GHz Input power at 0.1dB compression point 2nd Harmonic Level 3rd Harmonic Level Switching speed : Trise, Tfall Ton, Toff 1GHz 1 GHz, Pin = +35 dBm, 100% Duty Cycle 1 GHz, Pin = +35 dBm, 100% Duty Cycle 10% to 90% RF and 90% to 10% RF 50% control to 90% RF and 50% control to 10% RF dBc dBc s s Control Current 1 A Note: External DC blocking capacitors are required on all RF ports (typ: 100pF) 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com Advanced Product Information 1.1 FMS2020 Truth Table: V1 High Low V2 Low High PATH (ON) RF1-ANT RF2-ANT Note: `High' `Low' = +2.5V to +5V = 0V to 0.2V Pad and Die Layout: B D Pad A Pad Name ANT RF1 RF2 V1 V2 GND T1 GND T2 Description Antenna RF1 Output RF2 Output RF1 Control Voltage RF2 Control Voltage Ground 1 Ground 2 Pin Coordinates (m) 732, 510 270, 920 280, 101 731, 918 734, 98 186, 885 186, 420 F A G B C D E F G C E Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening Die Size (m) 930 x 1020(engineering mask) Die Thickness (m) 100 Min. Bond Pad Pitch(m) 166 Min. Bond pad opening (m) 70 x 70 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com Advanced Product Information 1.1 FMS2020 Simulated Performance: 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com Advanced Product Information 1.1 FMS2020 Preferred Assembly Instructions: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4m diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150C and a bonding force of 40g has been shown to give effective results for 25m wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com |
Price & Availability of FMS2020
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